Is ZnO a P type?

ZnO films grown at 400 and 450° are p-type, and As is a good acceptor. The acceptor peak is located at 3.32 eV, and its binding energy is about 100 meV. Acceptor concns. of As atoms in ZnO films were in the range from high 1017 to high 1021 atoms/cm3 as detd.

Why is ZnO a good semiconductor?

ZnO is a wide-band gap semiconductor of the II-VI semiconductor group. The native doping of the semiconductor due to oxygen vacancies or zinc interstitials is n-type. Other favorable properties include good transparency, high electron mobility, wide band gap, and strong room-temperature luminescence.

What type of semiconductor is ZnO?

ZnO is an n-type semiconductor with a bandgap of 3.3 eV, electron mobility about 10−4 to 10−3 cm2 V−1 S−1 and has been used as ETL in OPV since 1999.

What is ZnO used for?

Zinc oxide is an inorganic compound used in a number of manufacturing processes. It can be found in rubbers, plastics, ceramics, glass, cement, lubricants, paints, ointments, adhesives, sealants, pigments, foods, batteries, ferrites, fire retardants, and first-aid tapes.

Is ZnO doped GAN a/p type or n type semiconductor?

All Answers (28) ZnO with a wurtzite structure is naturally an n-type semiconductor because of a deviation from stoichiometry due to the presence of intrinsic defects such as O vacancies O(v) and Zn interstitials Zn(i) [1].

Is ZnO an insulator?

For the piezoelectric applications ZnO is considered as insulator; its relative dielectric permittivity is eps33=9.03. But in photovoltaic applications it is considered a semiconductor with Eg=3.4 EV.

Why NiO is P type semiconductor?

Doping of semiconductors is achieved by introducing atoms with more or less electrons than the parent element. Doping is substitutional, the dopant atoms directly replace the original atoms. This basically allows the Ni3+ ions to move and black NiO is therefore a p-type semiconductor.

What is the correct name for ZnO?

Zinc oxide
Zinc oxide (ZnO) is a common inorganic compound with a large number of uses. It is insoluble in water but soluble in dilute acids and bases.

Why is ZnO N type semiconductor?

ZnO with a wurtzite structure is naturally an n-type semiconductor because of a deviation from stoichiometry due to the presence of intrinsic defects such as O vacancies O(v) and Zn interstitials Zn(i) [1]. Undoped ZnO shows intrinsic n-type conductivity with very high electron densities of about 10^21 cm^−3.

What is ap type semiconductor?

A p-type semiconductor is an extrinsic type of semiconductor. When a trivalent impurity (like Boron, Aluminum etc.) is added to an intrinsic or pure semiconductor (silicon or germanium), it is said to be a p-type semiconductor. Trivalent impurities such as boron (B), gallium (Ga), indium (In), aluminum (Al) etc.

Is p-type ZnO possible?

Despite the difficulties in achieving p-type ZnO because of strong self-compensation, remarkable progresses in p-type ZnO and devices have been made in the past 10 years, theoretically and experimentally. The paper provides a comprehensive review on p-type ZnO materials: theory, growth, properties and devices.

What is the ZnO material?

ZnO is considered a promising material for semiconductor device applications due to its unique properties, such as a direct and wide band gap (3.37 eV) and a large exciton binding energy (60 meV). To realize these applications, the first step is the fabrication of high quality n-type and p-type ZnO materials.

What is the mobility of P-type ZnO films?

The p-type ZnO films had a hole concentration of ∼10 16 cm −3, a mobility of 125–217 cm 2 /V s. The clear rectifying behavior of I – V curve obtained from the homojunction ( Fig. 49) confirmed the p-type conduction of Al, N codoped ZnO films.

Is p-doped ZnO a good acceptor dopant for p-type zinc oxide?

Among all possible acceptor dopants in ZnO, P-doped ZnO exhibits high carrier concentrations, reasonable mobilities, and low resistivities and P is considered an important acceptor dopant to obtain high quality p-type ZnO. Great efforts have been made to study p-type ZnO with P as dopant.